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 DG858DW45
DG858DW45
Gate Turn-Off Thyristor
Replaces July 1999 version, DS4334-4.0 DS4334-4.1 May 2000
FEATURES
q q q q q q
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
KEY PARAMETERS ITCM 3000A VDRM 4500V IT(AV) 1100A dVD/dt 750V/s dIT/dt 300A/s
APPLICATIONS
q q q q q q q
Variable speed A.C. motor drive inverters (VSD-AC). Uninterruptable Power Supplies High Voltage Converters. Choppers. Welding. Induction Heating. DC/DC Converters.
Package outline type code : W See Package Details for further information. Fig.1 Package outline
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage VDRM V 4500 Repetitive Peak Reverse Voltage VRRM V 16 Conditions
DG858DW45
Tvj = 125oC, IDRM =100mA, IRRM = 50mA
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 3000 Units A A A
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o Repetitive peak controllable on-state current VD = VDRM, Tj = 125 C, diGQ/dt = 40A/s, Cs = 4.0F, LS 200nH
Mean on-state current RMS on-state current
THS = 80oC. Double side cooled, half sine 50Hz. 1100 THS = 80oC. Double side cooled, half sine 50Hz. 1720
DG858DW45
SURGE RATINGS
Symbol ITSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC
10ms half sine. Tj =125oC
Max.
20.0
Units kA A 2s A/s V/s V/s nH
2.0 x 106 300
20
VD = 3000V, IT = 3000A, Tj =125oC IFG > 40A, Rise time < 1.0s To 66% VDRM; RGK 22, Tj = 125oC To 66% VDRM; VRG = -2V, Tj = 125oC IT = 3000A, VD = VDRM, Tj = 125C, diGQ/dt = 40A/s, Cs = 4.0F
dVD/dt LS
Rate of rise of off-state voltage
750 200
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power
Peak reverse gate power
Conditions This value maybe exceeded during turn-off
Min. 20 20
Max. 16 100 20 24 60 -
Units
V
A W kW A/s s s
Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time
50 100
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg 2/7
Min. per contact -40 -40 36.0
Max. 0.011 0.017 0.03 0.0021 125 125 44.0
Units
o
C/W C/W C/W C/W
o
o
o
Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force
Clamping force 40kN With mounting compound
o
C C
o
kN
DG858DW45
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf
tgq
Parameter On-state voltage Peak off-state current
Peak reverse current
Conditions
At 3000A peak, IG(ON) = 10A d.c.
Min.
Max.
3.85
Units V mA mA V A mA mJ s s mJ s s s C C A
-
VDRM = 4500V, VRG = 2V
At VRRM VD = 24V, IT = 100A, Tj = 25oC
100 50 1.2 4.0 50 4400 2.0 6.0 12500 26 2.5 28.5 12500 25000 950
Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time
Rise time
VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 2000V IT = 3000A, dIT/dt = 300A/s IFG = 40A, rise time < 1.0s
Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 3000A, VDM = 4200V Snubber Cap Cs = 4.0F, diGQ/dt = 40/s
-
QGQ QGQT IGQM
RELIABILITY
Conditions DC blocking reliability Vdc = 3500V, Tj = -40 to + 125C, ambient cosmic radiation at sea level, in open air, 100% duty cycle. Limit Units 100 FIT
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DG858DW45
CURVES
4000 Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms
Instantaneous on-state current IT - (A)
3000
2000
1000
Tj = 125C Tj = 25C
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous on-state voltage VTM - (V)
Figure 2. On-state characteristics
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DG858DW45
Anode voltage and current
0.9VD
0.9IT
dVD/dt VD IT VD VDM
0.1VD td tgt tr
VDP tgs tgf
ITAIL
dIFG/dt
tgq IFG VFG IG(ON)
Gate voltage and current
0.1IFG
0.1IGQ tw1 QGQ 0.5IGQM IGQM Recommended gate conditions: ITCM = 3000A IFG = 40A IG(ON) = 10A d.c. tw1(min) = 20s IGQM = 1200A diGQ/dt = 40A/s QGQ = 12500C VRG(min) = 2V VRG(max) = 18V V(RG)BR
VRG
These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
Figure 3. General switching waveforms
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DG858DW45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6 x 2.0 deep (One in each electrode)
Auxiliary cathode connector O3.0
Gate connector O3.0
12
Anode O120 max O84.6 nom
O84.6 nom 72 max Cathode
Nominal weight: 1700g
Package outline type code: W
Associated Literature/Products
Publication No. AN4571 DS4567 DS4568 DS4150 DS4153 Title/Part Number Application note - GDU9X-XXXXX Series GTO gate drive units. GDU90-20721 GTO gate drive unit. GDU90-20722 GTO gate drive unit. DSF8045SK - Snubber diode. DSF21545SV - Antiparallel/freewheel diode.
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27.0 25.5
DG858DW45
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020. SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4334-1 Issue No.4.1 May 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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